Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising the steps of:

• coating with a SiO2 film on the surface of metal parts of a furnace port of a reaction furnace comprising a reaction tube, a heater to heat the inside of the reaction tube, and the furnace port located below the heater and including the metal parts which support the reaction tube by supplying at least SiH2Cl2 which is a deposition gas into the reaction furnace, before deposition so as to react with oxide containing substance coming into the furnace;
• loading substrates charged on a boat into the reaction furnace;
• and
• depositing a silicon nitride film on the substrates charged on the boat in the reaction furnace by supplying SiH2Cl2 and NH3 as the deposition gas into the reaction furnace.

A method for manufacturing a semiconductor device, comprising the steps of:

• growing an oxide film on the surface of metal parts of a furnace port of a reaction furnace comprising a reaction tube, a heater to heat the inside of the reaction tube, and the furnace port located below the heater and including the metal parts which support the reaction tube, before the substrate processing;
• loading the substrates charged on a boat into the reaction furnace;
• and
• processing the substrates charged on the boat in the reaction furnace, wherein said step of growing the oxide film comprising the steps of
• loading the substrates charged on the boat, which will not be final products, into the reaction furnace;
• heating the substrates charged on the boat in the reaction furnace;
• and
• unloading the substrates charged on the boat from the reaction furnace under the atmospheric condition.

A method for manufacturing a semiconductor device, comprising the steps of:

• growing an oxide film on the surface of metal parts of a furnace port of a reaction furnace comprising a reaction tube, a heater to heat the inside of the reaction tube, and the furnace port located below the heater and including the metal parts which support the reaction tube, before the substrate processing;
• loading the substrates charged on a boat into the reaction furnace;
• and
• processing the substrates charged on the boat in the reaction furnace, wherein said step of growing the oxide film comprising the steps of
• inserting the boat without charging substrates thereon into the reaction furnace;
• maintaining a furnace port cap which supports the boat and blocks an opening of the furnace port apart from the opening of the furnace port;
• and
• heating the inside of the reaction furnace in a state of keeping the furnace port cap apart from the opening of the furnace port.