Method for manufacturing thin film semiconductor device and method for forming resist pattern thereof
AssigneeNEC LCD Technologies, Ltd.
InventorMitsuasa Takahashi
Life of this patent
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Abstract
A method for manufacturing a thin film semiconductor device is provided which is capable of achieving simplification of manufacturing processes and of improving alignment accuracy without using a plurality of alignment masks. An alignment pattern is formed by using a resist layer having a plurality of regions each having a different film thickness corresponding to each of a plurality of patterns produced using a halftone mask having a halftone exposure region as a photomask and by forming a light transmitting portion to be an aperture pattern and by etching an underlying silicon layer. By having an underlying silicon layer exposed and implanting ions into an entire resist layer, only a main pattern region is doped with the ions.
Claims14
A method for manufacturing a thin film semiconductor device comprising:
- a process of forming an underlying silicon layer on a surface of a substrate;
- a process of forming, using a photomask having a halftone region, on a surface of said underlying silicon layer, a plurality of resist regions each having a different film thickness as a resist pattern and each corresponding to each of a plurality of patterns each being different from one another;
- at least one process of removing, when an underlying layer is exposed, a resist region having a least film thickness in said resist pattern,
- a process of forming an alignment pattern on said underlying silicon layer by etching a first aperture pattern using said resist pattern as a mask, and
- a process of forming patterns other than said alignment pattern using a resist pattern after removing said resist region having said least film thickness as a mask.
A method for manufacturing a thin film semiconductor device comprising:
- a process of forming an underlying silicon layer on a surface of a substrate;
- a process of forming, using a photomask having a halftone region, on a surface of said underlying silicon layer, a plurality of resist regions each having a different film thickness as a resist pattern and each corresponding to each of a plurality of patterns each being different from one another;
- at least one process of removing, when an underlying layer is exposed, a resist region having a least film thickness in said resist pattern by an ashing method,
- a process of forming an alignment pattern on said underlying silicon layer by etching a first aperture pattern using said resist pattern as a mask, and
- a process of forming patterns other than said alignment pattern using a resist pattern after performing said ashing method as a mask.
A method for forming a resist pattern on a surface of an underlying silicon layer formed on a surface of a substrate comprising:
- a process of forming a resist layer by coating with a photoresist;
- a process of forming an alignment pattern portion, a main pattern portion used in a subsequent process following formation of said alignment pattern portion, a light transmitting mask region, a halftone exposure region, and a light intercepting region on a photo mask used for formation of a pattern on said resist layer;
- and
- a process of performing an exposure operation on the formed resist layer using said photomask and performing a development operation to produce a plurality of resist regions each having a different thickness and at least one resist-removed region.
Dependencies are inferred from the claim text.