US 2003/0224540 A1 · Recognition method of a mark provided on a semiconductor device

Abstract

A high-contrast image recognition can be performed by recognizing an image of a recognition mark from a back surface of a wafer by a visible-light camera by irradiating a visible light from a circuit pattern surface of a silicon substrate. A thickness of the silicon substrate is set to 5 μm to 50 μm. A white or visible light having a wavelength equal to or less than 800 nm is irradiated onto the circuit-pattern forming surface of the substrate. A visible light that has transmitted through the silicon substrate is received by a visible-light camera on a side of a back surface of the silicon substrate. An image of a recognition mark formed on the circuit-pattern forming surface of the silicon substrate is recognized by the visible-light camera.

Claims10

Dependent claims

A mark recognition method of image recognition of a recognition mark formed on a circuit-pattern forming surface of a silicon substrate, comprising:

setting a thickness of the silicon substrate to 5 μm to 50 μm;
irradiating a white or visible light having a wavelength equal to or less than 800 nm onto the circuit-pattern forming surface of the substrate;
receiving a visible light that has transmitted through said silicon substrate by a visible-light camera on a side of a back surface of said silicon substrate;
and
recognizing an image of a recognition mark formed on the circuit-pattern forming surface of said silicon substrate.

2 more elements

A manufacturing method of a semiconductor device using a silicon substrate on which a plurality of semiconductor devices are formed simultaneously, comprising the steps of:

grinding a back surface of the silicon substrate so as to reduce a thickness to 5 μm to 50 μm;
irradiating a white or visible light having a wavelength equal to or less than 800 nm onto a circuit-pattern forming surface of said silicon substrate;
receiving the visible light after transmitting through said silicon substrate on a side of the back surface of said silicon substrate;
recognizing an image of a recognition mark formed along dicing lines formed on the circuit-pattern forming surface of said silicon substrate;
and
individualizing the semiconductor devices by dicing from the side of the back surface of said silicon substrate based on a result of the image recognition.

3 more elements

Dependencies are inferred from the claim text.

Recognition method of a mark provided on a semiconductor device

Life of this patent

Recognition method of a mark provided on a semiconductor device

Life of this patent

Abstract

Claims10