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US 2003/0224537 A1Published application
Ferroelectric thin film processing for ferroelectric field-effect transistor
AssigneeNational Chiao Tung University
InventorsSan-Yuan Chen, Chia-Liang Sun, Albert Chin
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Abstract
The present invention relates to a method for manufacturing a ferroelectric field-effect transistor, particularly to a ferroelectric field-effect transistor with a metal/ferroelectric/insulator/semiconductor (MFIS) gate capacitor structure. The method comprises steps of depositing a bismuth layered ferroelectric film on the insulator buffered Si, after a high-temperature thermal treatment, depositing an upper electrode on the bismuth layered ferroelectric film.
Claims21
A method for manufacturing a semiconductor applied to a one-transistor ferroelectric memory device, comprising steps of:
- providing an insulator;
- forming a bismuth ferroelectric film with bismuth layered perovskite structure on said insulator, wherein said bismuth is partially substituted by one of lanthanum and vanadium;
- treating said insulator and said bismuth ferroelectric film at a relatively high temperature;
- and
- depositing a metal upper electrode layer on said bismuth ferroelectric film.
2 more elements
Dependencies are inferred from the claim text.