US 2003/0224290 A1 · Photo acid generator, chemical amplification resist material and pattern formation method

Abstract

A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer. 1

Claims14

Dependent claims

A compound of the following general formula (1)

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wherein R1 and R2 may be the same or different and each represents a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms;
and Y represents a single bond, an oxygen atom, a nitrogen atom or an alkylene group having 1 to 4 carbon atoms;
R3 represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms or an aryl group having 6 to 16 carbon atoms, and may be substituted by an alkyl group having 1 to 4 carbon atoms, a fluorinated alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a fluorinated alkoxy group having 1 to 4 carbon atoms, a nitro group, a cyano group, a fluorine atom, a phenyl group, a substituted phenyl group, an acetyl group or a benzoyloxy group;
X represents a non-nucleophilic counter ion having 1 to 20 carbon atoms.

2 more elements

Dependencies are inferred from the claim text.

Photo acid generator, chemical amplification resist material and pattern formation method

Life of this patent

Photo acid generator, chemical amplification resist material and pattern formation method

Life of this patent

Abstract

Claims14