Lithography alignment and overlay measurement marks formed by resist mask blocking for MRAMs

A method of manufacturing a magnetic random access memory (MRAM) device, comprising:

• providing a semiconductor workpiece;
• forming an insulating layer having a top surface over the workpiece;
• using a damascene process, patterning the insulating layer to form a plurality of alignment marks and a plurality trenches for conductive lines;
• depositing a liner over the alignment marks and conductive line trenches;
• depositing a resist over the liner;
• removing the resist, leaving a portion of the resist residing over the alignment marks;
• depositing a conductive material over the insulating layer to fill the conductive line pattern and form conductive lines, leaving excess conductive material disposed over the conductive lines;
• removing the resist from over the alignment marks;
• and
• removing the excess conductive material from over the conductive lines and removing the liner from the insulating layer top surface, wherein the alignment marks may be used for alignment of subsequent layers of the MRAM device.