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AssigneeApplied Materials, Inc.
InventorsJeong Soo Byun, Alfred W. Mak, Hui Zhang, Hyungsuk Alexander Yoon, Avgerinos V. Gelatos, Robert L. Jackson, Ming Xi, Randhir P.S. Thakur
Estimating the term…
A process for treating refractory metal-boron layers deposited by atomic layer deposition resulting in the formation of a ternary amorphous refractory metal-nitrogen-boron film is disclosed. The resulting ternary film remains amorphous following thermal annealing at temperatures up to 800° C. The ternary films are formed following thermal annealing in a reactive nitrogen-containing gas. Subsequent processing does not disrupt the amorphous character of the ternary film. arrangement where a blended solution is supplied to a remote point of use.
A process for formation of a nitrogen-containing refractory metal film comprising the steps of depositing a refractory metal-boron layer on the substrate;
A process for treating a substrate on which a tungsten-boron layer has been deposited comprising the step of annealing said substrate in the presence of ammonia ambient.
A process for forming a device, comprising the steps of:
The process for forming a device of claim 20 further comprising the step of depositing a conductive layer on the substrate, wherein the conductive layer fills said via holes.
A process for fabrication of a MIM structured capacitor comprising the steps of:
The process of claim 26 wherein said high dielectric constant insulator is tantalum dioxide.
An interconnect device comprising:
A MIM structured capacitor comprising:
A barrier film for use in the fabrication of wafers comprising:
The barrier of film of claim 40 wherein the atomic percentage of boron is about 20%.
A barrier film for use in the fabrication of wafer comprising:
A barrier film for use in the fabrication of wafer comprising:
A barrier film for use in the fabrication of wafers comprising:
Dependencies are inferred from the claim text.