Semiconductor memory device with data bus scheme for reducing high frequency noise
AssigneeSamsung Electronics Co., Ltd.
InventorsMyun-joo Park, Jae-jun Lee
Life of this patent
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AssigneeSamsung Electronics Co., Ltd.
InventorsMyun-joo Park, Jae-jun Lee
Estimating the term…
A semiconductor memory device includes memory modules which have memories and a data bus which transfers data to the memory modules, in which the data bus comprises a low frequency band data pass unit which removes the high frequency component of the data and sends the data to the memory modules. The low frequency band data pass unit comprises a plurality of stubs which are connected to the data bus in parallel and are formed as printed circuit board (PCB) patterns. The low frequency band data pass unit comprises a plurality of plates that are connected to the data bus in parallel and are formed as PCB patterns. The low frequency band data pass unit has a shape in which parts having a wide width and parts having a narrow width are alternately connected. Therefore, without adding a separate passive device, the semiconductor memory device reduces the high frequency noise of data transferred through a data bus such that the voltage margin of the data improves, the cost for passive devices such as capacitors, is reduced, and the process for attaching the passive devices is simplified.
A semiconductor memory device comprising:
A semiconductor memory device comprising:
A semiconductor memory device comprising:
A semiconductor memory device comprising:
A semiconductor memory device comprising:
Dependencies are inferred from the claim text.