Semiconductor integrated circuit device

A semiconductor integrated circuit device having bipolar device and MISFET device, comprising:

• (a) a first circuit comprised of MISFET device, said first circuit receiving a first signal of a first frequency and outputting a second signal of a second frequency which is higher than said first frequency;
• (b) a level conversion circuit for converting level and amplitude of signal, said level conversion circuit receiving said second signal and outputting a third signal of said second frequency in response to said second signal;
• and
• (c) a second circuit comprised of bipolar device, said second circuit receiving said third signal and outputting a fourth signal of the third frequency which is higher than said second frequency.

A semiconductor integrated circuit device comprising (m+n) stages (m, n:

• positive integer) of the circuit which outputs two signals of the frequency divided to ½ from the frequency of the input signal,
• (a) wherein said circuits up to the first mth stage among said (m+n) stages are formed of bipolar device,
• (b) wherein the remaining n stages of said circuits among said (m+n) stages are formed of MISFET device, and
• (c) wherein a level conversion circuit for converting level and amplitude of signal is provided between the circuit of the mth stage and the circuit of the (m+1)th stage.

A semiconductor integrated circuit device comprising the (n+m) stages (n, m:

• positive integer) of the circuits for outputting the signal of the frequency of two times the frequency of two input signals,
• (a) wherein said circuits up to first nth stage among said (n+m) stages are formed of MISFET device,
• (b) wherein said circuits of remaining m stages among said (n+m) stages are formed of bipolar device, and
• (c) wherein a level conversion circuit for converting level and amplitude of signal is provided between said circuit of the nth stage and the circuit of the (n+1)th stage.