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US 2003/0222345 A1Published application
Stabilization of resist material through ion implantation
AssigneeIntel Corporation
InventorsChristopher Kenyon, Michael R. Fahy, Gerard T. Zietz
Life of this patent
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Abstract
A resist material used to mask an underlying layer during an etch process is subjected to ion implantation to harden the resist material against damage from the etch process. In a particular embodiment, the resist material is compatible with exposure to 193 nm radiation for patterning the resist material.
Claims26
A method, comprising:
- producing a predetermined pattern in a layer of resist material using deep ultraviolet lithography;
- and
- implanting the layer of resist material with ions in a predetermined dose sufficient to reduce damage to the resist material in an etch process.
An apparatus, comprising:
- a semiconductor structure fabricated by performing operations including
- producing a predetermined pattern in a layer of resist material using deep ultraviolet radiation;
- and
- implanting the resist material with ions in a predetermined dose to harden the resist material against damage in a first etch process.
1 more element
An apparatus, comprising:
- a wafer having
- a first layer of material disposed over a substrate;
- and
- a second layer of resist material disposed upon the first layer, the second layer having a pattern created by exposure to deep ultraviolet radiation and implanted with ions within a range of about 5×1014-2×1015 ions per cubic centimeter.
1 more element
Dependencies are inferred from the claim text.