Semiconductor device
AssigneeRenesas Technology Corp.
InventorKousei Higuchi
Life of this patent
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Abstract
A semiconductor device having at least two layers formed on a semiconductor substrate includes a first dielectric layer formed on the semiconductor substrate; a first interconnection layer which is formed on the first dielectric layer and has a first interconnection pattern and a dummy pattern formed around the first interconnection pattern; a second dielectric layer formed on the first interconnection layer; and a second interconnection layer which is formed on the second dielectric layer and has a second interconnection pattern. The dummy pattern is placed in the vicinity of only an area where the first and second interconnection patterns are superposed on each other.
Claims5
A semiconductor device having at least two interconnection layers formed on a semiconductor substrate, comprising:
- a first dielectric layer formed on said semiconductor substrate;
- a first interconnection layer which is formed on said first dielectric layer and has a first interconnection pattern and a dummy pattern formed around said first interconnection pattern;
- a second dielectric layer formed on said first interconnection layer;
- and
- a second interconnection layer which is formed on said second dielectric layer and has a second interconnection pattern, wherein said dummy pattern is placed in the vicinity of an area where said first and second interconnection patterns are superposed on each other.
Dependencies are inferred from the claim text.