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US 2003/0222276 A1Published application
Semiconductor device and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKatsunori Nishii, Yoshito Ikeda, Kaoru Inoue
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Abstract
An active region formed of a Group III nitride semiconductor is formed on a substrate. Then, an electrode is formed on the active region and a protective insulating film is formed on a part of the active region located in the peripheral portion of the electrode by oxidizing the Group III nitride semiconductor.
Claims10
A semiconductor device comprising:
- an active region formed of a Group III nitride semiconductor on a substrate;
- an electrode formed on the active region;
- and
- a protective insulating film formed on part of the active region located in the periphery of the electrode by oxidizing the Group III nitride semiconductor.
1 more element
A method for fabricating a semiconductor device, comprising the steps of:
- forming a semiconductor layer of a Group III nitride semiconductor on a substrate;
- oxidizing a surface portion of the semiconductor layer and thereby forming a protective insulating film, provided by the oxidized surface portion, on an active region formed of a non-oxidized portion of the semiconductor layer;
- and
- removing a predetermined part of the protective insulating film and then forming an electrode on a part of the active in which the protective insulating film does not exist.
1 more element
A method for fabricating a semiconductor device, comprising the steps of:
- forming a semiconductor layer of a Group III nitride semiconductor on a substrate;
- forming an anti-oxidation film on a predetermined part of the semiconductor layer;
- oxidizing a surface portion of the semiconductor layer using the anti-oxidation film as a mask and thereby forming a protective insulating film, provided by an oxidized part of the surface portion located outside of the anti-oxidation film, on an active region formed of a non-oxidized portion of the semiconductor layer;
- and
- removing the anti-oxidation film and then forming an electrode on a part of the active region from which the anti-oxidation film has been removed.
2 more elements
Dependencies are inferred from the claim text.