Light-emitting diode with enhanced light-emitting efficiency

A light-emitting diode (LED) with enhanced light-emitting efficiency, comprising:

• a substrate;
• a first electrode formed on the bottom surface of said substrate;
• an epitaxial LED structure having a pn junction formed on the top surface of said substrate, wherein there is at least one groove formed on said epitaxial LED structure passing through said pn junction such that said epitaxial LED structure is divided into a first epitaxial LED region and a second epitaxial LED region, and said groove having a light-reflective layer;
• a bottom insulating layer formed on the top surface of said first epitaxial LED region;
• a second electrode formed on the top surface of said bottom insulating layer;
• and
• at least one transparent conductive film formed on the top surface of said second epitaxial LED region.

A light-emitting diode (LED) with enhanced light-emitting efficiency, comprising:

• a substrate;
• a first electrode formed on the bottom surface of said substrate;
• an epitaxial LED structure having a pn junction formed on the top surface of said substrate, wherein there is at least one groove formed on said epitaxial LED structure passing through said pn junction such that said epitaxial LED structure is divided into a first epitaxial LED region and a second epitaxial LED region, and said groove having an insulating layer;
• a bottom insulating layer formed on the top surface of said first epitaxial LED region;
• a second electrode formed on the top surface of said bottom insulating layer;
• and
• at least one transparent conductive film formed on the top surface of said second epitaxial LED region.

A light-emitting diode (LED) with enhanced light-emitting efficiency, comprising:

• a substrate;
• a first electrode formed on the bottom surface of said substrate;
• an epitaxial LED structure having a pn junction formed on the top surface of said substrate, wherein a central trench is chiseled in the central portion of said epitaxial LED structure passing through said pn junction such that said epitaxial LED structure is divided into a first epitaxial LED region and a second epitaxial LED region, and said central trench having a light-reflective layer and a bottom insulating layer;
• a second electrode formed on the top surface of said bottom insulating layer;
• and
• at least one transparent conductive film formed on the top surface of said second epitaxial LED region.