Beam stop for use in an ion implantation system

A beam stop for use in an ion implantation system, comprising:

• a metallic base having a top surface and a bottom surface, said base having a passageway formed therein at a selected depth below the top surface for a cooling fluid circulation,
• a semi-elastic heat transfer layer formed of a material having a selected coefficient of thermal conductivity and having a selected width disposed on the top surface of said metallic base, and
• one or more silicon tiles disposed on said semi-elastic material so as to face an ion beam in said implantation system,
• wherein the depth of the passageway, and the coefficient of thermal conductivity and the width of the semi-elastic material, and the thermal expansion coefficients of the base and the tiles are selected such that a change in a linear dimension of the silicon tiles is substantially similar to a change in a corresponding linear dimension of said metallic base when the beam stop is heated by the ion beam.

A magnetically suppressed Faraday cup for use in an ion implantation system, comprising

• a beam stop comprising
• a base formed of a thermally conductive material adapted for coupling to a heat sink for removing heat from the base,
• a heat transfer layer of a semi-elastic material disposed on a surface of said base, and
• at least one tile formed of a thermally conductive refractory material disposed on said semi-elastic layer so as to face an ion beam in said implantation system,
• a magnet coupled to said beam stop and being in electrical conduction with said base, said magnet generating a magnetic field in a space above said tile so as to capture secondary electrons emitted by said beam stop in response to ion beam impact, and
• an insulator coupled to said magnet for providing electrical insulation.

An electrically suppressed Faraday cup for use in an ion implantation system, comprising

• a beam stop comprising
• a base formed of a thermally conductive material adapted for coupling to a heat sink for removing heat from the base,
• a heat transfer layer of a semi-elastic material disposed on a surface of said base, and
• at least one tile formed of a thermally conductive refractory material disposed on said semi-elastic layer so as to face an ion beam in said implantation system,
• a voltage source electrically coupled to said base for biasing said beam stop so as to generate an electric field in a space above said tiles for returning secondary electrons generated by the beam stop in response to ion impact to the beam stop.