US 2003/0221966 A1 · Method of electroplating copper over a patterned dielectric layer

Abstract

In a new method of electroplating metal onto a patterned dielectric layer including small diameter vias and large diameter trenches, a pulse reverse electroplating sequence with a two-component chemistry is modified to substantially fill the vias, while in a subsequent DC deposition the bulk material is deposited to completely fill the large diameter trenches. Thus, good control quality compared to conventional three-component chemistry electroplating is obtained while the superior characteristics of a metal layer deposited by a two-component chemistry are preserved. The method is particularly advantageous in electroplating copper.

Claims13

Dependent claims

A method of depositing a metal over a substrate including a patterned dielectric layer with a small diameter opening and a large diameter opening by electroplating, the method comprising:

providing an electrolyte bath including a suppressor additive and an accelerator additive;
positioning the substrate in said electrolyte bath;
generating a plurality of forward current pulses, each with a first time period, and a plurality of reverse current pulses, each with a second time period, in said electrolyte bath to deposit metal on said substrate, wherein said forward current pulses and said reverse current pulses are provided in an alternating fashion;
and
generating a DC current for a predefined third time period in said electrolyte bath to deposit metal on said substrate, wherein the first and second time periods are less than the third time period.

2 more elements

Dependencies are inferred from the claim text.

Method of electroplating copper over a patterned dielectric layer

Life of this patent

Method of electroplating copper over a patterned dielectric layer

Life of this patent

Abstract

Claims13