US 2003/0216052 A1 · Method for fabricating semiconductor device

Abstract

The method comprises the steps of sequentially forming a USG film 32, an SiN film 34, a USG film 36, a carbon film 50 and an anti-reflection coating 52 for protecting the carbon film 50 from ashing, forming a resist film 56 with openings in prescribed regions on the anti-reflection coating 52, etching the anti-reflection film 52 and the carbon film 50 with the resist film 56 as a mask, removing the resist film by ashing, and anisotropically etching the USG films 36, 32 with the carbon film 50 as a hard mask. Accordingly, the insulation film can be etched at a high selective ratio, and the increase of dimensions of a pattern of the mask with respect to dimension of a pattern of the resist film used in the patterning can be suppressed.

Claims17

Dependent claims

A method for fabricating a semiconductor device comprising the steps of:

sequentially forming on a substrate an insulation film, a carbon film and a protection film protecting the carbon film from ashing;
forming a resist film with an opening in a prescribed region on the protection film;
etching the protection film and the carbon film with the resist film as a mask;
removing the resist film by ashing;
and
etching the insulation film with the carbon film as a mask.

3 more elements

A method for fabricating a semiconductor device comprising the steps of:

sequentially forming on a substrate a first insulation film, a second insulation film having etching characteristics different from those of the first insulation film, and a third insulation film having etching characteristics different from those of the second insulation film;
forming a carbon film having a first opening in a first region on the third insulation film;
anisotropically etching the third insulation film and the second insulation film in the first region;
forming a second opening in the carbon film in a second region containing the first region;
and
anisotropically etching the first insulation film and the third insulation film with the carbon film and the second insulation film as a mask to form a via hole in the first insulation film in the first region, and a interconnection groove in the third insulation film in the second region.

3 more elements

Dependencies are inferred from the claim text.

Method for fabricating semiconductor device

Life of this patent

Method for fabricating semiconductor device

Life of this patent

Abstract

Claims17