Semiconductor device and method of fabricating the same
AssigneeNEC Electronics Corporation
InventorSatoru Mayuzumi
Life of this patent
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Abstract
A semiconductor device is provided with a semiconductor substrate, a gate insulation film formed on the semiconductor substrate, a gate electrode formed on the gate insulation film and having a portion increasing upward in the length along a gate length direction, a side wall formed on a side surface of the gate electrode so as to be covered behind a top part of the gate electrode as seen in plan view, and an interlayer insulation film covering the gate electrode. The side wall is in contact with the interlayer insulation film.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulation film formed on said semiconductor substrate;
- a gate electrode formed on said gate insulation film and having a portion increasing upward in the length along a gate length direction;
- a side wall formed on a side surface of said gate electrode so as to be covered behind a top part of said gate electrode as seen in plan view;
- and
- an interlayer insulation film covering said gate electrode and being in contact with said side wall.
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulation film formed on said semiconductor substrate;
- a gate electrode formed on said gate insulation film and having a portion increasing upward in the length along a gate length direction;
- a side wall formed on a side surface of said gate electrode so as to be covered behind a top part of said gate electrode as seen in plan view;
- an interlayer insulation film covering said gate electrode;
- and
- a contact formed in said interlayer insulation film and being in contact with said side wall.
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulation film formed on said semiconductor substrate;
- a gate electrode formed on said gate insulation film and having a portion increasing upward in the length along a gate length direction;
- and
- a side wall formed on a side surface of said gate electrode so as to be covered behind a top part of said gate electrode as seen in plan view, said side wall being formed of a lamination of at least two insulation films having different etching properties.
A method of fabricating a semiconductor device comprising the steps of:
- forming first and second insulation films on a semiconductor substrate in succession;
- forming an opening of tapered shape, narrowing with depth, in said second insulation film;
- forming an opening consistent with the bottom shape of said opening, in said first insulation film;
- burying a conductive film into said openings formed in said first and second insulation films to form a gate electrode;
- and
- etching said first and second insulation films with said conductive film as a mask to form a side wall on a side surface of said gate electrode so as to be covered behind a top part of said gate electrode as seen in plan view.
Dependencies are inferred from the claim text.