Method of improving HDP fill process

A method for a filling a trench in a layer comprising:

• providing a semiconductor layer having at least one trench therein;
• placing said semiconductor layer in a first process chamber;
• flowing a first precursor gas and a first inert gas into said first process chamber and forming a first plasma therein, wherein said first inert gas is selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• depositing a first layer of trench-filling material from said first plasma into said at least one trench;
• placing said semiconductor layer in a second process chamber;
• flowing a second precursor gas and a second inert gas into said second process and forming a second plasma therein, wherein said second inert gas is selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• and
• depositing a second layer of trench-filling material from said second plasma so as to substantially fill said at least one gap.

A method for filling a trench in a substrate disposed in a process chamber comprising:

• providing a semiconductor substrate having at least one trench therein;
• flowing a first precursor gas comprising a silicon precursor gas and an oxygen precursor gas and a first inert gas into said process chamber and forming a first plasma therein, wherein said first inert gas is selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• depositing a first layer of silicon dioxide from said first plasma into said at least one trench;
• purging said process chamber of said first inert gas by terminating said first plasma after said deposition of said first layer;
• flowing a second precursor gas comprising a silicon precursor gas and an oxygen precursor gas and a second inert gas into said process chamber and forming a second plasma therein, wherein said second inert gas is selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• and
• depositing a second layer of silicon dioxide from said second plasma to substantially fill said at least one trench.

A method for filling a trench in a substrate disposed in a process chamber comprising:

• providing a semiconductor substrate having at least one trench therein;
• flowing a first precursor gas comprising a silicon precursor gas and an oxygen precursor gas and a first inert gas into said process chamber and forming a first plasma therein, wherein said first inert gas is selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• depositing a first layer of silicon dioxide from said first plasma into said at least one trench;
• purging said process chamber of said first inert gas by forming an oxygen plasma in said process chamber after said deposition of said first layer;
• flowing a second precursor gas comprising a silicon precursor gas and an oxygen precursor gas and a second inert gas into said process chamber and forming a second plasma therein, wherein said second inert gas is selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• and
• depositing a second layer of silicon dioxide from said second plasma to substantially fill said at least one trench.

A method for filling a trench in a substrate disposed in a process chamber comprising:

• providing a semiconductor substrate having at least one trench therein;
• flowing a first precursor gas comprising a silicon precursor gas and an oxygen precursor gas and a first inert gas into said process chamber and forming a first plasma therein, wherein said first inert gas is selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• depositing a first layer of silicon dioxide from said first plasma into said at least one trench;
• purging said process chamber of said first inert gas by venting said first inert gas out of said process chamber;
• flowing a second precursor gas comprising a silicon precursor gas and an oxygen precursor gas and a second inert into said process chamber and forming a second plasma therein, wherein said second inert gas is selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• and
• depositing a second layer of silicon dioxide from said second plasma to substantially fill said at least one trench.

A method for filling a trench in a substrate comprising:

• providing a semiconductor substrate having at least one trench therein;
• placing said semiconductor substrate in a first process chamber;
• flowing a first precursor gas comprising a silicon precursor gas and an oxygen precursor gas and a first inert gas into said first process chamber and forming a first plasma therein, wherein said first inert gas is selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• depositing a first layer of silicon dioxide from said first plasma into said at least one trench;
• placing said semiconductor substrate in a second process chamber;
• flowing a second precursor gas comprising a silicon precursor gas and an oxygen precursor gas and a second inert gas into said second process chamber and forming a second plasma therein, wherein said second inert gas comprises helium, neon, argon, and krypton and combinations thereof;
• and
• depositing a second layer of silicon dioxide from said second plasma to substantially fill said at least one trench.

A method for filling a trench in a substrate disposed in a process chamber comprising:

• providing a semiconductor substrate having at least one trench therein;
• flowing a first precursor gas comprising silane and molecular oxygen and a first inert gas selected from the group consisting of helium and neon and combinations thereof into said process chamber, wherein said silane is flowed into said process chamber at a flow rate of about 1-150 sccm, said molecular oxygen is flowed into said process chamber at a flow rate of about 10-300 sccm and said first inert gas is flowed into said chamber at a flow rate of about 1-2000 sccm;
• forming a first plasma in said process chamber;
• depositing a first layer of silicon dioxide from said first plasma into said at least one trench;
• purging said first inert gas from said process chamber by terminating said first plasma after said deposition of said first layer;
• flowing a second precursor gas comprising silane and molecular oxygen and a second inert gas selected from the group consisting of argon and krypton and combinations thereof into said process chamber, wherein said silane is flowed into said process chamber at a flow rate of about 1-150 sccm, said oxygen is flowed into said process chamber at a flow rate of about 10-300 sccm and said second inert gas is flowed into said chamber at a flow rate of about 1-2000 sccm;
• forming a second plasma in said process chamber;
• and
• depositing a second layer of silicon dioxide from said second plasma to substantially fill said at least one trench.

A method for filling a trench in a substrate disposed in a process chamber comprising:

• providing a semiconductor substrate having at least one trench therein;
• flowing a first precursor gas comprising silane and molecular oxygen and a first inert gas selected from the group consisting of helium and neon and combinations thereof into said process chamber, wherein said silane is flowed into said process chamber at a flow rate of about 1-150 sccm, said molecular oxygen is flowed into said process chamber at a flow rate of about 10-300 sccm and said first inert gas is flowed into said chamber at a flow rate of about 1-2000 sccm;
• forming a first plasma in said process chamber;
• depositing a first layer of SiO2 from said first plasma into said at least one trench;
• purging said first inert gas from said process chamber by forming an oxygen plasma in said process chamber after said deposition of said first layer;
• flowing a second precursor gas comprising silane and molecular oxygen and a second inert gas selected from the group consisting of argon and krypton and combinations thereof into said process chamber, wherein said silane is flowed into said process chamber at a flow rate of about 1-150 sccm, said molecular oxygen is flowed into said process chamber at a flow rate of about 10-300 seem and said second inert gas is flowed into said chamber at a flow rate of about 1-2000 sccm;
• forming a second plasma in said process chamber;
• and
• depositing a second layer of silicon dioxide from said second plasma to substantially fill said at least one trench.

A method for filling a trench a substrate disposed in a process chamber comprising:

• providing a semiconductor substrate having at least one trench therein;
• flowing a first precursor gas comprising silane and oxygen and a first inert gas selected from the group consisting of helium and neon and combinations thereof into said process chamber, wherein said silane is flowed into said process chamber at a flow rate of about 1-150 seem, said oxygen is flowed into said process chamber at a flow rate of about 10-300 sccm and said first inert gas is flowed into said chamber at a flow rate of about 1-2000 sccm;
• forming a first plasma in said process chamber;
• depositing a first layer of silicon dioxide from said first plasma into said at least one trench;
• purging said first inert gas from said process chamber by venting said first inert gas from said process chamber after said deposition of said first layer;
• flowing a second precursor gas comprising silane and molecular oxygen and a second inert gas selected from the group consisting of argon and krypton and combinations thereof into said process chamber, wherein said silane is flowed into said process chamber at a flow rate of about 1-150 sccm, said molecular oxygen is flowed into said process chamber at a flow rate of about 10-300 sccm and said second inert gas is flowed into said chamber at a flow rate of about 1-2000 sccm;
• forming a second plasma in said process chamber;
• and
• depositing a second layer of silicon dioxide from said second plasma to substantially fill said at least one trench.

A method for filling a trench in a substrate comprising:

• providing a semiconductor substrate having at least one trench therein;
• placing said semiconductor substrate in a first process chamber;
• flowing a first precursor gas comprising silane and molecular oxygen and a first inert gas selected from the group consisting of helium and neon and combinations thereof into said first process chamber, wherein said silane is flowed into said process chamber at a flow rate of about 1-150 sccm, said molecular oxygen is flowed into said process chamber at a flow rate of about 10-300 sccm and said first inert gas is flowed into said chamber at a flow rate of about 1-2000 seem;
• forming a first plasma in said first process chamber;
• depositing a first layer of silicon dioxide from said first plasma into said at least one trench;
• placing said semiconductor substrate in a second process chamber;
• flowing a second precursor gas comprising silane and molecular oxygen and a second inert gas consisting of argon and krypton and combinations thereof into said second process chamber, wherein said silane is flowed into said process chamber at a flow rate of about 1-150 sccm, said molecular oxygen is flowed into said process chamber at a flow rate of about 10-300 sccm and said second inert gas is flowed into said chamber at a flow rate of about 1-2000 sccm;
• forming a second plasma in said second process chamber;
• and
• depositing a second layer of silicon dioxide from said second plasma to substantially fill said at least one trench.

A method of forming a silicon dioxide layer filling trenches in a semiconductor wafer by HDP-CVD comprising:

• forming a first plasma, wherein said first plasma contains at least a silicon precursor gas, an oxygen precursor gas and a first inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• exposing said wafer to said first plasma, wherein said step of exposing said wafer to said first plasma causes deposition of a first layer of silicon dioxide in said trenches in said wafer;
• forming a second plasma, wherein said second plasma contains at least a silicon precursor gas, an oxygen precursor gas and a second inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof, wherein said second inert gas is selected to be different from said first inert gas;
• and
• exposing said wafer to said second plasma, wherein said step of exposing said wafer to said second plasma causes deposition of a second layer of silicon dioxide substantially filling said trenches in said wafer.

A method of forming a silicon dioxide layer filling trenches in a semiconductor wafer by HDP-CVD comprising:

• forming a first plasma, wherein said first plasma contains at least a silicon precursor gas, an oxygen precursor gas and a first inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• exposing said wafer to said first plasma, wherein said step of exposing said wafer to said first plasma causes deposition of a first layer of silicon dioxide in said trenches in said wafer;
• terminating said first plasma;
• forming a second plasma after said termination of said first plasma, wherein said second plasma contains at least a silicon precursor gas, an oxygen precursor gas and a second inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof, wherein said second inert gas is selected to be different from said first inert gas;
• and
• exposing said wafer to said second plasma, wherein said step of exposing said wafer to said second plasma causes deposition of a second layer of silicon dioxide substantially filling said trenches in said wafer.

A method of forming a silicon dioxide layer filling trenches in a semiconductor wafer by HDP-CVD comprising:

• forming a first plasma, wherein said first plasma contains at least a silicon precursor gas, an oxygen precursor gas and a first inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• exposing said wafer to said first plasma, wherein said step of exposing said wafer to said first plasma causes deposition of a first layer of silicon dioxide in said trenches in said wafer;
• forming an oxygen plasma;
• terminating said oxygen plasma;
• forming a second plasma after said termination of said oxygen plasma, wherein said second plasma contains at least a silicon precursor gas, an oxygen precursor gas and a second inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof, wherein said second inert gas is selected to be different from said first inert gas;
• and
• exposing said wafer to said second plasma, wherein said step of exposing said wafer to said second plasma causes deposition of a second layer of silicon dioxide substantially filling said trenches in said wafer.

A method of filling trenches in a substrate comprising:

• creating a first plasma in a process chamber, wherein said first plasma comprises a silicon precursor gas, an oxygen precursor gas and a first inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• depositing a first layer of trench-filling material into said trenches in said substrate;
• purging said process chamber of said first inert gas;
• creating a second plasma in said process chamber, wherein said second plasma comprises a silicon precursor gas, an oxygen precursor gas and a second inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• and
• depositing a second layer of trench-filling material substantially filling said trenches in said substrate.

A method of filling trenches in a substrate comprising:

• placing said substrate in a first process chamber;
• creating a first plasma in said first process chamber, wherein said first plasma comprises a silicon precursor gas, an oxygen precursor gas and a first inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• depositing a first layer of trench-filling material into said trenches in said substrate;
• placing said substrate in a second process chamber;
• creating a second plasma in said second process chamber, wherein said second plasma comprises a silicon precursor gas, an oxygen precursor gas and a second inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• and
• depositing a second layer of trench-filling material substantially filling said trenches in said substrate.

A method of filling shallow trench isolation trenches with silicon dioxide comprising:

• providing a semiconductor substrate having shallow trench isolation trenches;
• placing said semiconductor substrate in a process chamber;
• creating a first plasma comprising a silicon precursor gas, an oxygen precursor gas and a first inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• depositing a first silicon dioxide layer in said shallow trench isolation trenches;
• purging said process chamber of said first inert gas;
• and
• creating a second plasma comprising a silicon precursor gas, an oxygen precursor gas and a second inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• depositing a second silicon dioxide layer substantially filling said shallow trench isolation trenches, wherein said first and second silicon dioxide layers are substantially free of voids.

A trench isolation structure formed in a semiconductor device comprising:

• a semiconductor substrate;
• a plurality of trenches formed in said semiconductor substrate, each said trench:
• being defined by a pair of sidewalls and a bottom wall;
• and
• being filled with a silicon dioxide layer substantially free of voids, wherein said silicon dioxide layer is deposited by:
• placing said semiconductor substrate in a process chamber;
• creating a first plasma in said process chamber, wherein said first plasma comprises a silicon precursor gas, an oxygen precursor gas and a first inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• depositing a first layer of silicon dioxide into said trench;
• purging said process chamber of said first inert gas;
• creating a second plasma in said process chamber, wherein said second plasma comprises a silicon precursor gas, an oxygen precursor gas and second inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• depositing a second layer of silicon dioxide substantially filling said trench.

A trench isolation structure formed in a semiconductor device comprising:

• a semiconductor substrate;
• a plurality of trenches formed in said semiconductor substrate, each said trench:
• being defined by a pair of sidewalls and a bottom wall;
• and
• being filled with a silicon dioxide layer substantially free of voids.

A trench isolation structure formed in a semiconductor device comprising:

• a semiconductor substrate;
• a plurality of trenches formed in said semiconductor substrate, each said trench
• being defined by a pair of sidewalls and a bottom wall;
• being filled with a first silicon dioxide layer substantially free of voids that is deposited conformally on said sidewalls and said bottom wall by:
• placing said semiconductor substrate in a process chamber;
• creating a first plasma in said process chamber, wherein said first plasma comprises a silicon precursor gas, an oxygen precursor gas and a first inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• depositing said first layer of silicon dioxide into said trench;
• and
• purging said process chamber;
• being filled with a second silicon dioxide layer substantially free of voids that is deposited to substantially fill said trench by:
• creating a second plasma in said process chamber, wherein said second plasma comprises a silicon precursor gas, an oxygen precursor gas and a second inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• depositing said second layer of silicon dioxide.

A trench isolation structure formed in a semiconductor device comprising:

• a semiconductor substrate;
• a plurality of trenches formed in said semiconductor substrate, each said trench:
• being defined by a pair of sidewalls and a bottom wall;
• and
• being filled with a silicon dioxide layer substantially free of voids, wherein said silicon dioxide layer is deposited by:
• placing said semiconductor substrate in a process chamber;
• creating a first plasma in said process chamber, wherein said first plasma comprises a silicon precursor gas, an oxygen precursor gas and a first inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• depositing a first layer of silicon dioxide into said trench;
• purging said process chamber of said first inert gas by terminating said first plasma;
• creating a second plasma in said process chamber, wherein said second plasma comprises a silicon precursor gas, an oxygen precursor gas and a second inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• depositing a second layer of silicon dioxide substantially filling said trench.

A trench isolation structure formed in a semiconductor device comprising:

• a semiconductor substrate;
• a plurality of trenches formed in said semiconductor substrate, each said trench:
• being defined by a pair of sidewalls and a bottom wall;
• and
• being filled with a silicon dioxide layer substantially free of voids, wherein said silicon dioxide layer is deposited by:
• placing said semiconductor substrate in a process chamber;
• creating a first plasma in said process chamber, wherein said first plasma comprises a silicon precursor gas, an oxygen precursor gas and a first inert gas comprising helium, neon, argon, and krypton and combinations thereof;
• depositing a first layer of silicon dioxide into said trench;
• purging said process chamber of said first inert gas by forming an oxygen plasma in said process chamber;
• creating a second plasma in said process chamber, wherein said second plasma comprises a silicon precursor gas, an oxygen precursor gas and second inert gas comprising helium, neon, argon, and krypton and combinations thereof;
• depositing a second layer of silicon dioxide substantially filling said trench.

A trench isolation structure formed in a semiconductor device comprising:

• a semiconductor substrate;
• a plurality of trenches formed in said semiconductor substrate, each said trench:
• being defined by a pair of sidewalls and a bottom wall;
• and
• being filled with a silicon dioxide layer substantially free of voids, wherein said silicon dioxide layer is deposited by:
• placing said semiconductor substrate in a process chamber;
• creating a first plasma in said process chamber, wherein said first plasma comprises a silicon precursor gas, an oxygen precursor gas and a first inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• depositing a first layer of silicon dioxide into said trench;
• purging said process chamber of said first inert gas by venting said process chamber;
• creating a second plasma in said process chamber, wherein said second plasma comprises a silicon precursor gas, an oxygen precursor gas and second inert gas selected from the group consisting of helium, neon, argon, and krypton and combinations thereof;
• depositing a second layer of silicon dioxide substantially filling said trench.