Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising the steps of:

• (a) preparing a semiconductor substrate having a first region in which a memory device is to be formed and a second region in which a logic device is to be formed;
• (b) forming a first interlayer insulating film on said semiconductor substrate;
• (c) forming a stopper film on said first interlayer insulating film;
• (d) forming, in said first interlayer insulating film and said stopper film, a first contact plug connected electrically to said semiconductor substrate in said first region and having an upper surface exposed from said stopper film and a second contact plug connected electrically to said semiconductor substrate in said second region and having an upper surface exposed from said stopper film;
• (e) forming a second interlayer insulating film on said stopper film and said first and second contact plugs;
• (f) etching said second interlayer insulating film with said stopper film and said first contact plug serving as an etching stopper, thereby forming an opening portion for exposing said first contact plug in said second interlayer insulating film;
• (g) forming a capacitor in contact with said first contact plug in said opening portion;
• and
• (h) etching said second interlayer insulating film with said stopper film and said second contact plug serving as an etching stopper, thereby forming a first contact hole reaching said second contact plug in said second interlayer insulating film.