Simple process for fabricating semiconductor devices
AssigneeNEC Corporation
InventorsKunihiro Shiota, Fujio Okumura
Life of this patent
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Abstract
An alignment pattern is required for photo masks to be exactly aligned with one another; an amorphous silicon is deposited over the entire surface of an insulating layer except for an area where the alignment pattern is to be formed, and a pattern for an ion-implantation and the alignment pattern are concurrently transferred to a photo resist layer; dopant impurity is ion implanted into the amorphous silicon layer by using the photo resist mask, and the insulating layer is selectively etched also by using the photo resist mask; this results in simplification of the process sequence.
Claims20
A process for fabricating a semiconductor device, comprising the steps of:
- a) preparing a substrate structure,
- b) forming a photo resist mask having a major pattern and an alignment pattern on said substrate structure,
- c) carrying out a pattern transfer from said photo resist mask to said substrate structure so as to form one of said major pattern and said alignment pattern in said substrate structure,
- d) carrying out another pattern transfer from said photo resist mask to said substrate structure so as to form the other of said major pattern and said alignment pattern in said substrate structure, and
- e) completing said semiconductor device through at least one photo-lithography.
Dependencies are inferred from the claim text.