US 2003/0215970 A1 · Deposition method of insulating layers having low dielectric constant of semiconductor device

Abstract

The present invention relates to a process for vapor depositing a low dielectric insulating film, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device.

Claims11

Dependent claims

A process for vapor depositing a low dielectric insulating film for a semiconductor device comprising the step of vapor depositing an a-SiCOH thin film by a CVD or PECVD method by supplying a reactant gas mixture comprising a gas phase main source, silane (SiH4), and an oxidant to a vapor deposition chamber comprising a substrate.

Dependencies are inferred from the claim text.

Facts

Application

10/150,480Filed 17 May 2002

Priority

KR 2002-002741317 May 2002

Published

20 Nov 2003

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10P 14/6922
Containing silicon: the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
C23C 16/401
Oxides: containing silicon
H10P 14/6682
The precursor containing a compound comprising Si: the compound being a silane, e.g. disilane, methylsilane or chlorosilane
G02F 1/1362
Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit: active…

Deposition method of insulating layers having low dielectric constant of semiconductor device

Life of this patent

Deposition method of insulating layers having low dielectric constant of semiconductor device

Life of this patent

Abstract

Claims11