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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsai-Sheng Gau, Anthony Yen, Burn J. Lin
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A method of inter-field critical dimension control. The method is applied to a wafer with a plurality of dies manufactured by a wafer manufacturing process that includes exposure. According to the method, a plurality of manufacturing modules is obtained by selecting a manufacturing device for each process of the manufacture. Then, for each manufacturing module, exposure is performed with a predetermined exposure energy to obtain critical dimension distribution data corresponding to the predetermined exposure energy, and critical dimension calibration data for each of the dies is further determined. Thus, when one of the manufacturing modules is applied to perform the manufacture, an exposure energy for each of the dies is determined according to the predetermined exposure energy and the critical dimension calibration data for each of the dies, and the manufacture is performed with the exposure energy on each of the dies for the manufacturing module.
A method of inter-field critical dimension control for a wafer with a plurality of dies manufactured by exposure, the method comprising:
A method of inter-field critical dimension control for a wafer with a plurality of dies manufactured by exposure, comprising:
A method of inter-field critical dimension control for a wafer with a plurality of dies manufactured by exposure, comprising:
Dependencies are inferred from the claim text.