Method of fabricating ferroelectric capacitor

A method of fabricating a ferroelectric capacitor comprising:

• providing a semiconductor substrate;
• forming an oxide film on the semiconductor substrate;
• forming an adhesion layer, a lower electrode film, a ferroelectric film, an upper electrode film, and an etching mask in that order on the oxide film;
• forming a resist pattern on the etching mask;
• etching the etching mask using the resist pattern as a mask;
• etching the upper electrode film and the ferroelectric film using the etching mask as a mask to form an upper electrode and a ferroelectric film pattern;
• forming a protective film on the entire upper surface of a structure obtained above;
• etching back the protective film to remain a portion thereof on the sidewall of the upper electrode and the ferroelectric film pattern;
• etching the lower electrode film to form a lower electrode;
• and
• removing the etching mask and the adhesion layer.

A method of fabricating a ferroelectric capacitor comprising:

• providing a semiconductor substrate;
• forming an oxide film on the semiconductor substrate;
• forming an adhesion layer, a lower electrode film, a ferroelectric film, an upper electrode film, and an etching mask pattern in that order on the oxide film;
• etching the upper electrode film using the etching mask pattern as a mask to form an upper electrode;
• forming a protective film on the sidewall of the upper electrode;
• etching the ferroelectric film and the lower electrode film to form a lower electrode;
• and
• removing the etching mask and the adhesion layer.