Pattern forming method and method for manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising:

• providing a to-be-processed film on a substrate;
• providing a resist film on the to-be-processed film;
• patterning the resist film;
• providing a film of a radiosensitive compound on the to-be-processed film such that the patterned resist film is covered with the film of the radiosensitive compound;
• subjecting the film of the radiosensitive compound to irradiation and a development process, thus exposing an upper surface of the resist film and patterning the film of the radiosensitive compound;
• removing the resist film, processing the to-be-processed film and forming a pattern thereon, using the patterned film of the radiosensitive compound as a mask;
• and
• performing an etching process on the basis of the formed pattern.