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US 2003/0215573 A1Published application
Film forming apparatus and film forming method
AssigneeTokyo Electron Limited
InventorTakahiro Nishibayashi
Life of this patent
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Abstract
Coating an insulating film on a substrate, heating the substrate at a pressure higher than an atmospheric pressure in a chamber, followed by the curing process performed at a pressure lower than the atmospheric pressure in a separate chamber. With this process, the desorption of the porogen from the insulating film during heating can be restrained therefore an insulating film of high quality can be formed.
Claims22
A method for forming a film, comprising:
- (a) coating an insulating film on a substrate;
- (b) heating the substrate coated with the insulating film at a first temperature and at a first pressure higher than an atmospheric pressure;
- and
- (c) heating the substrate at a second temperature and at a second pressure lower than the atmospheric pressure after the step (b).
1 more element
A method for forming a film, comprising:
- (a) heating a substrate coated with an insulating film containing a porogen at a first temperature and at a first pressure higher than an atomospheric pressure;
- (b) heating the substrate at the first pressure and at a second temperature higher the first temperature after the step (a);
- and
- (c) heating the substrate at a second pressure lower than the atmospheric pressure.
1 more element
A method for forming a film, comprising:
- (a) heating a substrate coated with an insulating film at a first pressure higher than an atmospheric pressure;
- (b) heating the substrate at a second pressure lower than the atmospheric pressure after the step (a);
- (c) measuring a film thickness of the insulating film in at least one of the step (a) and the step (b);
- (d) inferring a relative permittivity of the insulating film corresponding to a value of the film thickness measured in the step (c);
- and
- (e) controlling at least one of the first pressure in the step (a) and the second pressure in the step (b) corresponding to a value of the relative permittivity inferred in the step (d).
3 more elements
A method for forming a film, comprising:
- (a) heating a substrate coated with an insulating film containing a porogen at a first temperature, and at a first pressure higher than an atmospheric pressure so that a solvent contained in the insulating film evaporates;
- (b) measuring a concentration of the solvent evaporated in the heating process in the step (a);
- (c) heating the substrate at a second temperature higher than the first temperature for a predetermined time period after the concentration of the solvent measured in the step (b) reaches a predetermined value;
- (d) heating the substrate at a second pressure lower than the atmospheric pressure so that a porogen contained in the insulating film evaporates;
- (e) measuring an amount of the porogen evaporated in the step (d);
- and
- (f) terminating the step (d) when the amount of porogen measured in the step (e) reached a predetermined value.
4 more elements
An apparatus for forming a film, comprising:
- a coating process portion for coating an insulating film containing a porogen on a substrate;
- a first heating process portion having a first processing chamber capable of being hermetically sealed, for performing a first heating process for the substrate coated with the insulating film at a first pressure higher than an atmospheric pressure and at a first temperature, and performing a second heating process for the substrate at the first pressure and at a second temperature higher than the first temperature;
- and
- a second heating process portion having a second processing chamber capable of being hermetically sealed, for performing a third heating process for the substrate at a second pressure lower than the atmospheric pressure on the substrate heated in the first heating process portion.
1 more element
Dependencies are inferred from the claim text.