Temperature-dependent refresh cycle for dram

Abstract

The invention relates to a device for generating a refresh signal for a memory cell of a semiconductor memory device, the device comprising: a temperature-independent current source for providing a current having a predeterminable temperature-independent current intensity; a temperature-independent voltage source for providing a predeterminable temperature-independent voltage potential; a temperature-dependent reference voltage source for providing a temperature-dependent reference voltage potential; a capacitor, whose first capacitor electrode, for charging the capacitor, is electrically connected to the temperature-independent current source, and whose second capacitor electrode is electrically connected to the temperature-independent voltage source; and a comparator, whose first comparator input is electrically connected to the first capacitor electrode and whose second comparator input is connected to the temperature-dependent voltage source, the comparator being designed for a voltage comparison between the capacitor voltage potential present at the capacitor and the reference voltage potential, and, if the capacitor voltage potential exceeds the reference voltage potential, for outputting the refresh signal. Furthermore, the invention relates to a method for generating a refresh signal for a memory cell of a semiconductor memory device.

Dependencies are inferred from the claim text.