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US 2003/0214836 A1Published application
Magnetic random access memory cell device using magnetic tunnel junction
AssigneeHynix Semiconductor Inc.
InventorsSang-Hyun Oh, Kye-Nam Lee
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Abstract
The present invention provides a magnetic random access memory (MRAM) cell device with a magnetic tunnel junction capable of obtaining a sufficient sense margins. To achieve this effect, the present invention provides a magnetic random access memory (MRAM) cell device, including: a word line; a bit line; a switching unit connected to the word line and the bit line; a magnetic tunnel junction unit connected to the bit line and the switching unit in parallel.
Claims13
A magnetic random access memory (MRAM) cell device, comprising:
- a word line;
- a bit line;
- a switching unit connected to the word line and the bit line;
- a magnetic tunnel junction unit connected to the bit line and the switching unit in parallel.
1 more element
Dependencies are inferred from the claim text.