Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• an interlayer insulating film including at least a fluorine doped silicon oxide film layer;
• and
• a bonding pad,
• wherein said bonding pad is formed in a hole penetrating through said interlayer insulating film.

A method of manufacturing a semiconductor device comprising the steps of:

• (a) forming an interlayer insulating film having a multilayered structure including a fluorine doped silicon oxide film layer and an SiH4 based silicon oxide film layer;
• and
• (b) forming a bonding pad on said interlayer insulating film, said step (a) including:
• (a1) forming said fluorine doped silicon oxide film layer;
• (a2) forming another insulating film layer on said fluorine doped silicon oxide film layer;
• (a3) flattening upper surfaces of said layers formed in said steps (a1) and (a2) and exposing said fluorine doped silicon oxide film layer to said upper surfaces partially or wholly;
• and
• (a4) forming said SiH4 based silicon oxide film layer after said step (a3),
• wherein a region right under said bonding pad formed at said step (b) includes at least a part of a region in which said fluorine doped silicon oxide film layer is exposed at said step (a3).