Method for fabricating semiconductor device having tertiary diffusion barrier layer for copper line

Abstract

The present invention relates to a method for fabricating a semiconductor device having a diffusion barrier layer with a Cu line to prevent degradation in performance of the diffusion barrier layer. The present invention provides a method for fabricating a semiconductor device, including the steps of: depositing a tertiary nitride containing Ti, W and N on a substrate loaded inside of a reactive deposition chamber; and densifying the tertiary nitride and performing a reforming process for filling a surface of the tertiary nitride with oxygen. Also, the present invention provides a method for fabricating a semiconductor device, including the steps of: forming a conductive layer on top of a substrate; forming a diffusion barrier layer constructed with titanium (Ti), tungsten (W) and nitrogen (N) on the conductive layer; and forming a Cu line on the diffusion barrier layer.

Dependencies are inferred from the claim text.