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US 2003/0214038 A1Published application
Semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorYoshihiko Nemoto
Life of this patent
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Abstract
The bump underlying metal film has a first metallic deposit film formed by a first electroless plating method, and a second metallic deposit film formed on the first metallic deposit film by a second electroless plating method using a plating solution different in type from that used in the first electroless plating method. The bump underling metal film is so arranged that the first metallic deposit film has a thickness larger than the organic insulating film, and the first metallic deposit film has a peripheral portion superposed on the organic insulating film.
Claims3
A semiconductor device comprising:
- an electrode formed on a semiconductor substrate provided with a semiconductor integrated circuit and electrically connected to said semiconductor integrated circuit;
- an organic insulating film formed on said semiconductor substrate and having an opening through which said electrode is exposed;
- and
- a bump electrode formed on said electrode through a bump underlying metal film;
- wherein said bump underlying metal film includes a first metallic deposit film formed by a first electroless plating method and a second metallic deposit film formed on said first metallic deposit film by a second electroless plating method using a plating solution different in type from that of said first electroless plating method, said first metallic deposit film having a thickness larger than said organic insulating film, said first metallic deposit film being so formed that a peripheral portion thereof is superposed on said organic insulating film.
2 more elements
Dependencies are inferred from the claim text.