Incorporation of an impurity into a thin film
AssigneeInternational Business Machines Corporation
InventorsCharles Augustus Choate IV, Timothy S. Hayes, Michael Raymond Lunn, Paul R. Nisson, Dean W. Siegel, Michael C. Triplett
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Abstract
The present invention describes a method of forming a thin film on a substrate arranged in a deposition system comprising the step of introducing a pre-determined amount of an impurity in a confined volume in the deposition system. One or more gases are introduced into the deposition system for forming the thin film. The impurity is removed from the confined volume in a gas phase during formation of the thin film. The impurity in the gas phase is incorporated into the thin film.
Claims20
A method of incorporating an impurity in a thin film comprising the steps of:
- providing a substrate to a deposition chamber;
- providing an impurity cell in the deposition chamber, the impurity cell having a pre-determined amount of an impurity in a confined volume;
- introducing one or more gases into the deposition chamber for forming the thin film;
- and
- removing the impurity from the impurity cell in a gas phase, wherein the impurity in the gas phase is incorporated into the thin film.
An apparatus for incorporating an impurity in a thin film on a substrate arranged in a deposition chamber comprising:
- an impurity cell in the deposition chamber, the impurity cell having a pre-determined amount of an impurity in a confined volume;
- wherein, the impurity is removed from the impurity cell in a gas phase and is incorporated into the thin film during thin film deposition.
A method of incorporating an impurity in a thin film comprising the steps of:
- providing a deposition chamber;
- providing a substrate arranged in the deposition chamber;
- providing an impurity cell which introduces a pre-determined amount of an impurity in the deposition chamber;
- providing an impurity source coupled to the impurity cell;
- isolating the impurity source from the impurity cell and the deposition chamber, and delivering impurity in a gas phase from the impurity cell into the deposition chamber;
- introducing one or more gases into the deposition chamber for forming the thin film, wherein the impurity in the gas phase is incorporated into the thin film;
- and,
- isolating the deposition chamber from the impurity cell and the impurity source, and charging the impurity cell with impurity from the impurity source.
Dependencies are inferred from the claim text.