Methods for preparing ruthenium and osmium compounds and films
AssigneeMicron Technology, Inc.
InventorsStefan Uhlenbrock, Brian A. Vaartstra
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Abstract
The present invention provides methods for the preparation of compounds of the formula (Formula I): LyM(CO)z wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5. These methods involve the reaction of Ru3(CO)12 or Os3(CO)12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure.
Claims45
A method for the preparation of a compound of the formula:
- LyM(CO)z
- wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5, the method comprising reacting Ru3(CO)12 or Os3(CO)12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure.
A method for the preparation of a compound of the formula:
- LyM(CO)z
- wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5, the method comprising reacting Ru3(CO)12 or Os3(CO)12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure;
- wherein the solvent system comprises at least one solvent selected from the group of toluene, xylene, substituted benzene, heptane, octane, nonane, and combinations thereof;
- and further wherein a complex of Formula I is prepared in an amount of greater than about 90%.
A method for the preparation of a compound of the formula:
- LyM(CO)z
- wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5, the method comprising reacting Ru3(CO)12 or Os3(CO)12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure;
- wherein the solvent system comprises at least one solvent selected from the group of toluene, xylene, substituted benzene, heptane, octane, nonane, and combinations thereof;
- and further wherein a complex of Formula I is prepared in an amount of greater than about 90% in no greater than about 36 hours.
A method for the preparation of a compound of the formula:
- LyM(CO)z
- wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5, the method comprising reacting Ru3(CO)12 or Os3(CO)12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure;
- wherein a complex of Formula I is prepared in an amount of greater than about 95% in no greater than about 24 hours.
A method of applying a metal-containing film on a surface of a substrate comprising:
- preparing a compound of Formula I:
- LyM(CO)z
- wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5, the method comprising reacting Ru3(CO)12 or OS3(CO)12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure and wherein the solvent system comprises two or more solvents;
- and
- employing a chemical vapor deposition technique to decompose the compound of Formula I.
A method of applying a metal-containing film on a surface of a substrate comprising:
- preparing a compound of Formula 1:
- LyM(CO)z
- wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5, the method comprising reacting Ru3(CO)12 or Os3(CO)12 in the presence of CO with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure;
- and
- employing a chemical vapor deposition technique to decompose the compound of Formula I.
A method of applying a metal-containing film on a surface of a substrate comprising:
- preparing a compound of Formula I:
- LyM(CO)z
- wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5, the method comprising reacting Ru3(CO)12 or Os3(CO)12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure, wherein a complex of Formula I is prepared in an amount of greater than about 90%;
- and
- employing a chemical vapor deposition technique to decompose the compound of Formula I.
A method of applying a metal-containing film on a surface of a substrate comprising:
- preparing a compound of Formula I:
- LyM(CO)z
- wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5, the method comprising reacting Ru3(CO)12 or Os3(CO)12 in an inert atmosphere with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure, and isolating the compound of Formula I by removing the solvent system and unreacted ligand in vacuo;
- and
- employing a chemical vapor deposition technique to decompose the compound of Formula I.
A method of applying a metal-containing film on a surface of a substrate comprising:
- preparing a compound of Formula I:
- LyM(CO)z
- wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5, the method comprising:
- reacting Ru3(CO)12 or Os3(CO)12 in an inert atmosphere with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure to provide a reaction mixture;
- and
- vacuum distilling the reaction mixture;
- and
- employing a chemical vapor deposition technique to decompose the compound of Formula I.
A method of applying a metal-containing film on a surface of a substrate comprising:
- preparing a compound of Formula I:
- LyM(CO)z
- wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5, the method comprising reacting Ru3(CO)12 or Os3(CO)12 in an inert atmosphere with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure;
- wherein the neutral ligand is present in an amount of up to about a 20-fold excess relative to Ru3(CO)12 or Os3(CO)12;
- and
- employing a chemical vapor deposition technique to decompose the compound of Formula I.
Dependencies are inferred from the claim text.