Method for preventing or reducing anodic cu corrosion during cmp

A method for preventing or reducing corrosion of copper containing features included in a semiconductor wafer in a chemical mechanical polishing (CMP) process comprising the steps of:

• providing at least one semiconductor wafer polishing surface including copper filled anisotropically etched features;
• polishing the at least one semiconductor wafer polishing surface according to a CMP process having a polishing pad surface contacting the at least one semiconductor wafer polishing surface at least a portion of the polishing pad in electrically conductive communication with a conductive polishing platen;
• and,
• providing at least one electrically conductive pathway from the conductive polishing platen to ground potential during at least a portion of the CMP process to reduce an electrical charge at the at least one semiconductor polishing surface.