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US 2003/0211732 A1Published application
High-resistivity metal in a phase-change memory cell
OwnerChien Chianginventor
Life of this patent
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Abstract
The invention relates to lower electrode in a chalcogenide memory device. The lower electrode is a metal compound that includes at least one of nitrogen and silicon. Embodiments include refractory metal nitride, a refractory metal silicon nitride, and a refractory metal silicide.
Claims28
A process of forming a lower electrode in a phase-change memory device, comprising:
- providing a substrate comprising an active area and a first dielectric;
- forming a recess in the first dielectric to expose the active area;
- depositing a metal compound film in the recess, wherein the metal compound includes at least one of nitrogen or silicon;
- filling the recess with a second dielectric;
- and
- removing the second dielectric located above the recess.
3 more elements
A lower electrode in a phase-change memory device comprising:
- a substrate including an active area;
- a recess in the substrate that communicates to the active area;
- a metal compound film disposed in the recess, wherein the metal compound film is in contact with the active area, wherein the metal compound film extends to the top of the recess;
- and
- wherein the metal compound includes at least one of nitrogen and silicon.
2 more elements
A lower electrode in a phase-change memory cell, comprising:
- a plurality of memory cells;
- a row select line;
- a column select line;
- a phase-change memory material;
- an upper electrode;
- and
- a lower electrode, the lower electrode further comprising:
- a metal selected from titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, cobalt, nickel, tantalum, niobium, tungsten, cobalt, nickel, and palladium;
- nitrogen;
- and
- optionally silicon.
8 more elements
Dependencies are inferred from the claim text.