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AssigneeMicron Technology, Inc.
InventorsGary Chen, Li Li
Estimating the term…
A method for removing a dielectric anti-reflective coating (DARC) of silicon oxynitride material from a layer of insulative material which is formed over a substrate in a semiconductor device involves contacting the DARC material with a mixture of tetramethylammonium fluoride and at least one acid such as hydrofluoric acid, hydrochloric acid, nitric acid, phosphoric acid, acetic acid, citric acid, sulfuric acid, carbonic acid or ethylenediamine tetraacetic acid. Contact with the mixture is for a time period sufficient to remove substantially all of the DARC material. The mixture has a high etch rate selectivity such that the DARC coating can be removed with minimal effect on the underlying insulative layer.
A method of removing a dielectric anti-reflective coating, comprising contacting said coating with a removal mixture comprising tetramethylammonium fluoride and at least one acid selected from the group consisting of hydrofluoric acid, hydrochloric acid, nitric acid, phosphoric acid, acetic acid, citric acid, sulfuric acid, carbonic acid and ethylenediamine tetraacetic acid.
A method of removing silicon oxynitride material, said method comprising contacting said material with a mixture of tetramethylammonium fluoride and at least one acid selected from the group consisting of hydrofluoric acid, hydrochloric acid, nitric acid, phosphoric acid, acetic acid, citric acid, sulfuric acid, carbonic acid and ethylenediamine tetraacetic acid.
A method of forming a contact opening in an insulative layer formed over a substrate in a semiconductor device, comprising:
A method of removing a dielectric anti-reflective coating, comprising contacting the coating with a reaction mixture of tetramethylammonium hydroxide and excess hydrofluoric acid.
A method of chemical mechanical planarization, comprising:
A semiconductor device, comprising:
A composition suitable for use in removing a silicon oxynitride dielectric anti-reflective coating, comprising:
A method of removing metallic debris from an opening formed in a dielectric layer comprising contacting said debris with a removal mixture comprising tetramethylammonium fluoride and at least one acid selected from the group consisting of hydrofluoric acid, hydrochloric acid, nitric acid, phosphoric acid, acetic acid, citric acid, sulfuric acid, carbonic acid and ethylenediamine tetraacetic acid.
A method of removing native oxide from an opening formed in an insulative layer comprising contacting said native oxide with a removal mixture comprising tetramethylammonium fluoride and at least one acid selected from the group consisting of hydrofluoric acid, hydrochloric acid, nitric acid, phosphoric acid, acetic acid, citric acid, sulfuric acid, carbonic acid and ethylenediamine tetraacetic acid.
Dependencies are inferred from the claim text.