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US 2003/0211669 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hisashi Ohtani
Life of this patent
Estimating the term…
Abstract
When a crystalline semiconductor thin film formed by using a catalytic element for facilitating crystallization is subjected to a heat treatment in an atmosphere containing a halogen element at a temperature exceeding 700° C., a crystal structure in which crystal grain boundaries do not substantially exist can be obtained. In the present invention, the foregoing crystalline semiconductor thin film is formed on a crystallized glass substrate which is inexpensive and has high heat resistance, so that an inexpensive semiconductor device can be provided.
Claims39
A semiconductor device comprising:
- a glass substrate having a distortion point of not lower than 750° C.;
- an insulating silicon film disposed on at least a front surface and a back surface of said glass substrate;
- and
- a TFT including a channel formation region of a semiconductor thin film made of a collective of a plurality of rod-like or flattened rod-like crystals and disposed on said insulating silicon film,
- wherein plane orientation of said channel formation region is roughly {110} orientation, and not less than 90% of crystal lattices have continuity at crystal grain boundaries.
2 more elements
A semiconductor device comprising:
- a glass substrate having a distortion point of not lower than 750° C.;
- an insulating silicon film disposed on at least a front surface and a back surface of said glass substrate;
- and
- a TFT including a channel formation region of a semiconductor thin film make of a collective of a plurality of rod-like or flattened rod-like crystals and disposed on said insulating silicon film,
- wherein plane orientation of the channel formation region is roughly {110} orientation, and not less that 90% of lattice stripes observed to cross crystal grain boundaries are linearly continuous between different crystal grains forming said crystal grain boundaries.
2 more elements
A semiconductor device comprising:
- a glass substrate having a distortion point of not lower than 750° C.;
- an insulating silicon film disposed on at least a front surface and a back surface of said glass substrate;
- and
- a TFT including a channel formation region of a semiconductor thin film made of a collective of a plurality of rod-like or flattened rod-like crystals and disposed on said insulating silicon film,
- wherein an electron beam diffraction pattern observed when said channel formation region is vertically irradiated with an electron beam has regularity peculiar to {110} orientation.
2 more elements
A semiconductor device comprising:
- a glass substrate having a distortion point of not lower than 750° C.;
- an insulating silicon film disposed on at least a front surface and a back surface of said glass substrate;
- and
- a TFT including a channel formation region of a crystalline semiconductor thin film disposed on said insulating silicon film.
1 more element
A semiconductor device comprising:
- a glass substrate having a distortion point of not lower than 750° C.;
- an insulating silicon film formed on at least a front surface and a back surface of said glass substrate;
- and
- a TFT including a channel formation region of a high temperature polysilicon film disposed on said insulating silicon film.
1 more element
A method of manufacturing a semiconductor device, comprising the steps of:
- forming an insulating silicon film by a low pressure CVD method on all surfaces of a glass substrate having a distortion point of not lower than 750° C.;
- forming an amorphous semiconductor thin film on the insulating silicon film formed at a front side of said glass substrate;
- adding or holding a catalytic element for facilitating crystallization of said amorphous semiconductor thin film in a part or all of said amorphous semiconductor thin film;
- carrying out a heat treatment to crystallize the part or all of said amorphous semiconductor thin film and to transform it into a crystalline semiconductor thin film;
- gettering said catalytic element from the crystalline semiconductor thin film;
- and
- patterning the crystalline semiconductor thin film after said gettering step to form an active layer and to form a thermal oxidation film on a surface of said active layer.
4 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- forming an insulating silicon film by a low pressure CVD method on all surfaces of a glass substrate having a distortion point of not lower than 750° C.;
- forming an amorphous semiconductor thin film on the insulating silicon film formed at a front side of said glass substrate;
- carrying out a heat treatment to crystallize said amorphous semiconductor thin film and to transform the film into a crystalline semiconductor thin film;
- and
- patterning said crystalline semiconductor thin film to form an active layer and to form a thermal oxidation film on a surface of said active layer.
2 more elements
A method of manufacturing an electroluminescent display comprising the steps of:
- forming an insulating silicon film by low pressure CVD method on all surfaces of a glass substrate having a distortion point of not lower that 750° C.;
- forming an amorphous semiconductor thin film on the insulating silicon film formed at a front side of said glass substrate;
- adding or holding a catalytic element for facilitating crystallization of said amorphous semiconductor thin film in a part or all of said amorphous semiconductor thin film;
- carrying out a heat treatment to crystallize the part or all of said amorphous semiconductor thin film and to transform it into a crystalline semiconductor thin film;
- gettering said catalytic element from the crystalline semiconductor thin film;
- and
- patterning the crystalline semiconductor thin film after said gettering step to form an active layer and to form a thermal oxidation film on a surface of said active layer.
4 more elements
A method of manufacturing an electroluminescent display comprising the steps of:
- forming an insulating silicon film by low pressure CVD method on all surfaces of a glass substrate having a distortion point of not lower that 750° C.;
- forming an amorphous semiconductor thin film on the insulating silicon film formed at a front side of said glass substrate;
- carrying out a heat treatment to crystallize said amorphous semiconductor thin film and to transform the film into a crystalline semiconductor thin film;
- and
- patterning said crystalline semiconductor thin film to form an active layer and to form a thermal oxidation film on a surface of said active layer.
2 more elements
Dependencies are inferred from the claim text.