Bandgap engineering of tfel devices
AssigneeLuxell Technologies, Inc.
InventorAlexey N. Krasnov
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Abstract
We introduce an alternative concept to increase the efficiency and brightness of thin-film electroluminescent (TFEL) devices. The method utilizes bandgap engineering of the active layer of the device. First steps of our work using a ZnSxSe1−x alloy are also presented to demonstrate workability of the method. The related obstacles and future potentials of the bandgap engineering for monochrome and color TFEL devices, are discussed.
Claims2
An improved alternating current thin-film electroluminescent display having two stacked dielectrics, a semiconductor active layer therebetween, and metallic cladding electrodes at each side thereof;
- wherein the semiconductor layer is developed by automated thermal co-evaporation so as to provide a monotonic decrease of the band gap thereof from the respective interfaces with said stacked dielectrics to the middle of said semiconductor active layer so that the dopant concentration thereof is maintained at about 0.7%
Dependencies are inferred from the claim text.