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US 2003/0211325 A1Published application
Method of forming a carbon doped oxide layer on a substrate
AssigneeIntel Corporation
InventorSteven N. Towle
Life of this patent
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Abstract
A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition apparatus a source of carbon, silicon, boron, and oxygen. That apparatus is then operated under conditions that cause a boron containing carbon doped oxide layer to form on the substrate.
Claims16
A method of forming a carbon doped oxide layer on a substrate comprising:
- introducing into a chemical vapor deposition apparatus a source or sources of carbon, silicon, oxygen, and boron;
- then
- operating the apparatus under conditions that cause a boron containing carbon doped oxide layer to form on the substrate.
A method of forming a semiconductor device comprising:
- forming on a substrate a boron containing carbon doped oxide layer by
- introducing into a plasma enhanced chemical vapor deposition reactor gases that provide a source of carbon, silicon, oxygen, and boron;
- then
- operating the reactor under conditions that cause a boron containing carbon doped oxide layer to form on the substrate.
1 more element
A semiconductor device comprising:
- a substrate covered by a boron containing carbon doped oxide layer, the boron containing carbon doped oxide layer including between about 3 and about 20 atom % boron and between about 5 and about 50 atom % carbon, exclusive of hydrogen content.
Dependencies are inferred from the claim text.