Dielectric material and process of insulating a semiconductor device using same

A dielectric material comprising a product formed by the steps of:

• (a) casting a polyphenylene upon a silicon wafer;
• (b) disposing water on a surface of said cast polyphenylene, said water present in a concentration of between about 0.01% and about 1%, said percentages being by weight, based on the total weight of said cast polyphenylene;
• (c) contacting said polyphenylene with liquid or supercritical carbon dioxide under a pressure in the range of between about 1,000 psi and about 8,000 psi and a temperature in the range of between about 32° C. and about 100° C.;
• and
• (d) changing said thermodynamic conditions to ambient temperature and pressure.

A process of insulating an electrical assembly which includes semiconductor devices comprising the steps of:

• (a) disposing a polymeric material upon a surface of a semiconductor device;
• (b) contacting said polymeric material with liquid or supercritical carbon dioxide under thermodynamic conditions consistent with the maintenance of carbon dioxide in said liquid or supercritical state;
• and
• (c) adjusting said thermodynamic conditions under which said semiconductor device is maintained to those of ambient temperature and pressure.