Projection optical system, a projection exposure apparatus provided with the same, as well as a device manufacturing method

A projection exposure apparatus for projecting an image of patterns formed on a mask onto a workpiece, comprising:

• a first stage that secures a mask as a first object;
• an illumination system that illuminates an exposure light of a predetermined wavelength;
• a second stage that secures said workpiece as a second object;
• and
• a projection optical system arranged in an optical path between said mask and said workpiece,
• wherein the projection optical system comprising:
• a first lens group with a positive power, arranged between said mask and said workpiece;
• a second lens group with a negative power, arranged between said first lens group and said workpiece;
• a third lens group with a positive power, arranged between said second lens group and said workpiece;
• a fourth lens group with a negative power, arranged between said third lens group and said workpiece;
• a fifth lens group with a positive power, arranged between said fourth lens group and said workpiece;
• and
• wherein said fifth lens group including at least two negative lens and a first lens made of a first material,
• wherein two lens surfaces of the first lens satisfy the condition φ1/φexp≦3.5,
• wherein said first material satisfies the condition n1<1.57,
• wherein said projection optical system including a second lens made of a second material,
• wherein two lens surfaces of the second lens satisfy the condition φ2/φexp>3.5,
• and wherein said second material satisfies the condition n2>1.57, where
• φexp:
• a diameter of an exposure area on the second object,
• φ1:
• a diameter of a clear aperture of the two lens surfaces of the first lens,
• φ2:
• a diameter of a clear aperture of the two lens surfaces of the second lens,
• n1:
• a refractive index of the first lens, and
• n2:
• a refractive index of the second lens.

A method for transferring a pattern arranged on a mask onto a workpiece, comprising the steps of:

• providing a projection optical system including:
• a first lens group having a positive power and arranged between the mask and the workpiece;
• a second lens group having a negative power and arranged between said first lens group and said workpiece;
• a third lens group having a positive power and arranged between said second lens group and said workpiece;
• a fourth lens group having a negative power and arranged between said third lens group and said workpiece;
• a fifth lens group having a positive power and arranged between said fourth lens group and said workpiece;
• wherein said fifth lens group including at least two negative lens and a first lens made of a first material,
• wherein two lens surfaces of the first lens satisfy the condition φ1/φexp≦3.5,
• wherein said first material satisfies the condition n1<1.57,
• wherein said projection optical system including a second lens made of a second material,
• wherein two lens surfaces of the second lens satisfy the condition φ2/φexp>3.5,
• and wherein said second material satisfies the condition n2>1.57, where
• φexp:
• a diameter of an exposure area on the second object,
• φ1:
• a diameter of a clear aperture of the two lens surfaces of the first lens,
• φ2:
• a diameter of a clear aperture of the two lens surfaces of the second lens,
• n1:
• a refractive index of the first lens, and
• n2:
• a refractive index of the second lens;
• illuminating said mask by use of a predetermined wavelength;
• and
• operating the projection optical system so as to form in one lot a reduced image of an illuminated said mask into a predetermined field on the workpiece.

A photolithography method comprising the steps of:

• transferring a first pattern to a rectangular pattern transfer area on a workpiece by use of a scanning type projection exposure apparatus;
• and
• transferring a second pattern to said rectangular pattern transfer area by using a batch exposure type projection exposure apparatus having a shape similar to said rectangular pattern transfer area,
• wherein said batch exposure type projection exposure apparatus comprising a projection optical system having an exposure area with a nearly integer multiples of said rectangular transfer area and having a predetermined workpiece side numerical aperture, and wherein said projection optical system including a plurality of optical elements shaped and positioned such that said exposure area includes a rectangular field of at least 25×33 mm, and a maximum value of said predetermined workpiece side numerical aperture is greater than or equal to 0.5.

A batch type projection exposure apparatus for being used in conjunction with a scanning type exposure apparatus, comprising:

• an illumination optical including a light source, that illuminates an exposure light from the light source onto a mask;
• and
• a projection optical system including an image field, that projects a reduction image of a pattern on the mask onto the image field on a workpiece,
• wherein said image field includes a rectangular shaped maximum exposure area of the scanning type exposure apparatus,
• and wherein said projection optical system having a numerical aperture at the side of workpiece is greater than or equal to 0.5.