Semiconductor device

A semiconductor device comprising:

• a substrate;
• a source/drain diffused layer formed in the substrate for a transistor;
• and
• a dummy diffused layer formed in the substrate,
• wherein the source/drain diffused layer has its surface silicided, and
• wherein the dummy diffused layer has its surface covered with a dummy gate electrode at least partially, the dummy gate electrode having the same structure as a gate electrode for the transistor.

A semiconductor device comprising:

• a substrate;
• a source/drain diffused layer formed in the substrate for a transistor;
• and
• a dummy diffused layer formed in the substrate,
• wherein the source/drain and dummy diffused layers have their surfaces silicided, and
• wherein a well of a first conductivity type is defined in the substrate, and
• wherein the dummy diffused layer is formed in the well and a dopant of a second conductivity type has been introduced into the dummy diffused layer, the second conductivity type being opposite to the first conductivity type.

A semiconductor device comprising:

• a substrate of a first conductivity type;
• a source/drain diffused layer, which is formed in the substrate for a transistor and has its surface silicided;
• a first well of a second conductivity type, the first well being defined in the substrate, the second conductivity type being opposite to the first conductivity type;
• a dummy diffused layer formed in the first well and located between two circuit blocks;
• and
• a second well of the first conductivity type, the second well being defined between the first well and one of the two circuit blocks.