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US 2003/0209762 A1Published application
Semiconductor device and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKatsunori Nishii, Kaoru Inoue, Toshinobu Matsuno, Yoshito Ikeda, Hiroyuki Masato
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Abstract
An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is formed on the insulating oxidation layer.
Claims10
A semiconductor device comprising:
- a first nitride semiconductor layer formed over a substrate;
- an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer;
- and
- a gate electrode formed on the insulating oxidation layer.
1 more element
Dependencies are inferred from the claim text.