Transistor of semiconductor device, and method for forming the same
OwnerGa Won Lee, Jae Hee Leeinventors
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Abstract
The present invention discloses a transistor of a semiconductor device and a method for forming the same which provides improved electrical characteristics of the transistor and allow a high integration density of the device wherein a super steep halo doped region is formed according to a halo implant process using a gate and a dummy gate as masks by reducing a halo dose in source/drain junction regions in order to prevent deterioration of characteristic of the device.
Claims17
A transistor of a semiconductor device, comprising:
- an device isolation film defining an active region of a semiconductor substrate;
- a gate provided in the active region;
- dummy gates provided at both sides of the gate, wherein the dummy gates are spaced apart from the gate at a distance of ‘d’ has a height of ‘h’, the dummy gates being positioned to overlap the device isolation film and the active region;
- an LDD region formed in the semiconductor substrate between the gate and the dummy gate;
- and
- a halo doped region formed under a portion of the LDD region below the gate and the dummy gates.
A transistor of a semiconductor device, comprising:
- an device isolation film defining an active region of a semiconductor substrate;
- a gate provided in the active region;
- dummy gates provided at both sides of the gate, wherein the dummy gates are spaced apart from the gate at a distance of ‘d’ has a height of ‘h’, the dummy gates being positioned to overlap the device isolation film and the active region;
- an insulating film filling a space between the gate and the dummy gate;
- an LDD region formed in the semiconductor substrate between the gate and the dummy gate;
- and
- a halo doped region formed under a portion of the LDD region below the gate and the dummy gates.
A method for forming a transistor of a semiconductor device, comprising the steps of:
- forming a stacked structure of a gate oxide film and a gate, and dummy gates at both sides of the gate on a semiconductor substrate using a gate mask;
- forming an LDD region in the semiconductor substrate using the gate and the dummy gate as masks;
- and
- performing a halo implant process to form a halo doped region under a portion of the LDD region below the gate and the dummy gate using the gate and the dummy gate as masks.
A method for forming a transistor of a semiconductor device, comprising the steps of:
- forming a stacked structure of a gate oxide film and a gate, and dummy gates at both sides of the gate on a semiconductor substrate using a gate mask;
- forming an LDD region in the semiconductor substrate using the gate and the dummy gate as masks;
- performing a halo implant process to form a halo doped region under a portion of the LDD region below the gate and the dummy gate using the gate and the dummy gate as masks;
- filling a space between the gate and the dummy gate;
- forming insulating film spacers on the sidewalls of the gate and the dummy gate;
- and
- ion-implanting a high concentration impurity into the semiconductor substrate by using the gate, the dummy gate and the insulating film spacer as masks to form source/drain junction regions.
Dependencies are inferred from the claim text.