Semiconductor integrated circuit
AssigneeRenesas Technology Corp.
InventorsMasayuki Ohayashi, Takashi Yokoi
Life of this patent
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Abstract
A semiconductor integrated circuit effectively makes use of wiring channels of wiring formed by a damascene method. When first cells are used, since the M1 power source lines are laid out at positions away from a boundary between the cells, the power source lines are not combined in laying out a semiconductor integrated circuit. As a result, a width of the power source lines is not changed. Accordingly, an interval between the line and a line which is arranged close to the line determined in response to a line width of the lines can satisfy a rule and hence, the reduction of the wiring channels can be obviated, whereby the supply rate of the wiring channels can be enhanced and, further, the integrity of a semiconductor chip can be enhanced.
Claims13
A semiconductor integrated circuit in which a plurality of cells having given functions respectively are arranged,
- wherein lines which are arranged in peripheral portions of the cells are laid out at positions away from a boundary defined between the cells which are arranged close to each other.
A semiconductor integrated circuit in which a plurality of cells respectively having given functions are arranged in the first direction and the second direction which is orthogonal to the first direction,
- wherein power source lines are arranged on peripheral portions of the cell while extending in the first direction, and
- wherein the power source lines arranged on the peripheral portions of the cell are laid out at positions away in the second direction from a boundary defined between the cells which are arranged close to each other in the second direction.
A semiconductor integrated circuit in which a plurality of cells respectively having given functions are arranged,
- wherein the cell includes wide-width lines arranged at peripheral portions thereof and narrow-width lines having a line width narrower than a line width of the wide-width lines, and a line interval between the wide-width line and the narrow-width line which is arranged close to the wide-width line is set wider than the minimum arrangement pitch of the narrow-width lines.
A semiconductor integrated circuit which is formed on one semiconductor substrate in a form that the semiconductor integrated circuit includes a first region and a second region which is different from the first region,
- wherein a plurality of first cells respectively having given functions are arranged in the first region, lines which are arranged on peripheral portions of the first cell are laid out at positions away from boundaries of the first cells which are arranged close to each other, and
- wherein a plurality of second cells respectively having given functions are arranged in the second region, the second cell includes wide-width lines arranged on the peripheral portion and narrow-width lines having a line width narrower than a line width of the wide-width lines in the second cell, and a line interval between the wide-width line and the narrow-width line which is arranged close to the wide-width line is set wider than the minimum arrangement pitch of the narrow-width lines.
A semiconductor integrated circuit which is formed on one semiconductor substrate in a form that the semiconductor integrated circuit includes a first region and a second region which is different from the first region,
- wherein in the first region, a plurality of first cells having respective given functions are arranged in the first direction as well as in the second direction orthogonal to the first direction,
- wherein power source lines extend in the first direction and are arranged in the peripheral portions of the first cells,
- wherein the power source lines in the peripheral portions of the first cell are laid out at positions away in the second direction from a boundary defined between the first cell and another first cell which is arranged close to the first cell in the second direction,
- wherein in the second region, a plurality of second cells having respective given functions are arranged in the third direction as well as in the fourth direction orthogonal to the third direction,
- wherein power source lines extend in the third direction and are arranged in the peripheral portions of the second cells, and
- wherein the power source line in the peripheral portion of the second cell is configured to be integrally formed with the power source line of another second cell which is arranged close to the second cell in the fourth direction.
A semiconductor integrated circuit which is formed on one semiconductor substrate in a form that the semiconductor integrated circuit includes a first region and a second region which is different from the first region,
- wherein in the first region, a plurality of first cells having respective given functions are arranged in the first direction as well as in the second direction orthogonal to the first direction,
- wherein power source lines extend in the first direction and are arranged in the peripheral portions of the first cells,
- wherein the power source lines in the peripheral portions of the first cell are laid out at positions away in the second direction from a boundary defined between the first cell and another first cell which is arranged close to the first cell in the second direction,
- wherein in the second region, a plurality of second cells having respective given functions are arranged in the third direction as well as in the fourth direction orthogonal to the third direction,
- wherein the second cell includes wide-width lines which constitute power source lines arranged in peripheral portions of the second cell and arranged to extend in the third direction and narrow-width lines having a narrower line width than the wide-width lines and arranged to extend in the third direction, and
- wherein the power source line in the peripheral portion of the second cell is configured to be integrally formed with the power source line of another second cell which is arranged close to the second cell in the fourth direction.
Dependencies are inferred from the claim text.