Back to results
US 2003/0209704 A1Published application
Light emitting device
AssigneeNichia Corporation
InventorMotokazu Yamada
Life of this patent
Estimating the term…
Abstract
A light emitting device includes an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes first and second well layers made of a nitride compound semiconductor containing In, where the second well layer emits light having a main peak wavelength which is longer than that of the first well layer, and where the growth number of the first well layer is more than the growth number of the second well layer.
Claims8
A light emitting device comprising:
- an active layer of a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer;
- said active layer including,
- at least one first well layer made of nitride compound semiconductor containing In, and
- at least one second well layer made of nitride compound semiconductor containing In, said second well layer emitting light having a main peak wavelength longer than that of said first well layer,
- wherein the growth number of said first well layer is more than the growth number of said second well layer.
2 more elements
Dependencies are inferred from the claim text.