Two-dimensionally arrayed quantum device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorIchiro Yamashita
Life of this patent
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Abstract
A quantum device is constituted from a two-dimensional array of quantum dots formed from metal atom aggregates contained in a metalloprotein complex. The metalloprotein is arranged on the surface of a substrate having an insulation layer with a pitch of the size of the metalloprotein complex. The diameter of the metal atom aggregates used in the quantum device is 7 nm or smaller, and the pitch of the metalloprotein complex is preferably from 11 to 14 nm.
Claims24
A method of fabricating a quantum device, which comprises the steps of:
- (a) adsorbing a metalloprotein complex onto an LB membrane developed on the surface of an aqueous solution;
- (b) placing said LB membrane having said metalloprotein complex adsorbed thereon on a substrate and burning out said protein under inert atmosphere that does not react with said substrate, said substrate being durable to temperatures beyond the burn-out temperature of said protein and having an insulation layer or a semiconductor layer on the surface thereof;
- and
- (c) reducing said metalloprotein complex thereby to obtain metal atom aggregates.
A diode having a pn junction formed from quantum dots arranged on the surface of a substrate which has an insulation layer on the surface thereof, said diode comprising:
- said quantum dots comprising metal atom aggregates;
- donor impurities and acceptor impurities formed from metal atom aggregates contained in metalloprotein complex hetero-dimer being arrayed with a pitch of the size of said metalloprotein complex on the surface of said substrate;
- an n-type region, a p-type region and a pn junction being formed by diffusing said donor impurities and acceptor impurities via said insulation layer into said substrate;
- an electrode section formed in a specified configuration;
- and
- a wiring section for connecting said n-type region, said p-type region and said electrode section.
A method of fabricating diode which has a pn junction formed from quantum dots arrayed on the surface of a substrate having an insulation layer on the surface thereof, comprising the steps of:
- (a) fabricating metalloprotein complex hetero-dimer including donor impurities and acceptor impurities formed from metal atom aggregates;
- (b) having metalloprotein complex hetero-dimer adsorbed onto an LB membrane developed on the surface of an aqueous solution;
- (c) placing said LB membrane having said metalloprotein complex hetero-dimer adsorbed thereon on a substrate which is durable to temperatures beyond the burn-out temperature of protein and has an insulation layer on the surface thereof, and burning out the protein through heat treatment in an inert gas that does not react with said substrate;
- (d) reducing said metalloprotein complex in a reducing atmosphere thereby to obtain metal atom aggregates;
- (e) forming an n-type region, a p-type region and a pn junction by diffusing said donor impurities and acceptor impurities via said insulation layer into said substrate by heat treatment;
- (f) forming a electrode section by patterning electrodes of specified configuration;
- and
- (g) irradiating said n-type region, p-type region, pn junction and electrode section with electron beam of a scanning electron microscope, of which beam width is set to be not greater than said pitch, in vacuum in the presence of a trace of carbon compound, while scanning said electron beam to have carbon vapor-deposited between said n-type region and said electrode section, and between p-type region and said electrode section, thereby forming lead wires.
A transistor having npn or pnp structure formed from quantum dots arrayed on the surface of a substrate which has an insulation layer on the surface thereof, said transistor comprising:
- said quantum dots comprising metal atom aggregates;
- donor impurities or acceptor impurities formed from metal atom aggregates contained in metalloprotein complex hetero-trimer being arrayed with a pitch of the size of said metalloprotein complex, and a group of impurities capable of forming npn structure formed from acceptor impurities having donor impurities on both sides thereof or a group of impurities capable of forming pnp structure formed from donor impurities having acceptor impurities on both sides thereof is arrayed on the surface of said substrate;
- and
- an n-type region, a p-type region and a pn junction formed by diffusing said donor impurities and acceptor impurities via said insulation layer into said substrate, and an electrode section formed in a specified configuration and a wiring section for connecting said n-type region, said p-type region and the electrode section.
A transistor al-lay comprising transistors arranged in two-dimensional configuration, said transistor having an npn or pnp structure formed from quantum dots arrayed on the surface of a semiconductor substrate which has an insulation layer on the surface thereof, said transistor comprising;
- said quantum dots comprising metal atom aggregates;
- donor impurities or acceptor impurities formed from metal atom aggregates contained in metalloprotein complex hetero-trimer having at least one layer of apoprotein in the surrounding thereof are arranged with a pitch of the size of said metalloprotein complex, and a group of impurities capable of forming npn structure formed from acceptor impurities having donor impurities on both sides thereof or a group of impurities capable of forming pnp structure formed from donor impurities having acceptor impurities on both sides thereof is arranged on the surface of said substrate;
- an n-type region, a p-type region and a pn junction formed by diffusing said donor impurities and acceptor impurities via said insulation layer into said substrate, and an electrode section formed in a specified configuration and a wiring section for connecting the n-type region, the p-type region and said electrode section;
- and
- said transistors are arrayed in two-dimensional configuration at intervals of an integral number times said pitch which is from 11 to 14 nm.
A semiconductor light emitting device having p-type and n-type semiconductor layers and an activation layer on an insulating substrate, wherein
- masking quantum dots formed from a plurality of metal atom aggregates contained in metalloprotein complex are arrayed in two-dimensional configuration on the surface of said activation layer with a pitch of the size of said metalloprotein complex, and quantum dots formed from said activation layer are formed by plasma etching via said masking quantum dots.
Dependencies are inferred from the claim text.