Temperature control for single substrate semiconductor processing reactor

A method of operating a thermal reactor for the treatment of flat substrates, comprising:

• loading a substrate into the reactor;
• selectively operating heating elements to define a non-uniform temperature distribution across a heated body adjacent the substrate, the non-uniform temperature distribution extending in a lateral direction over the substrate and selected to compensate for an uneven thermal effect upon the substrate during operation of the reactor;
• processing the substrate for a predetermined period of time while the substrate is subjected to the non-uniform temperature distribution;
• and
• unloading the substrate from the reactor after the predetermined period of time.

A reactor for heat treatment of a flat substrate, comprising:

• a substrate enclosing structure defining a process chamber between an upper part and a bottom part, the upper and bottom parts configured to separate for loading and unloading a flat substrate along a loading/unloading direction;
• a support structure configured to position the substrate between the upper part and the bottom part, the substrate having major surfaces within about 2 mm of each of the upper part and the bottom part within the process chamber during processing;
• and
• a plurality of heating elements associated with the substrate enclosing structure, wherein the heating elements are arranged to define heating zones, wherein each heating zone is configured to extend only over a portion of the upper and bottom parts;
• and
• a controller connected to the heating elements individually, the controller being programmed to provide a non-uniform temperature distribution across at least one of the upper and lower parts.