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US 2003/0209192 A1Published application
Formation method for semiconductor layer
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsYoshiaki Hasegawa, Ayumu Tsujimura, Isao Kidoguchi, Yuzaburo Ban
Life of this patent
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Abstract
After a Group III-V compound semiconductor layer, to which a p-type dopant has been introduced, has been formed over a substrate, the compound semiconductor layer is annealed. In the stage of heating the compound semiconductor layer, atoms, deactivating the p-type dopant, are eliminated from the compound semiconductor layer by creating a temperature gradient in the compound semiconductor layer.
Claims13
A method for forming a semiconductor layer, the method comprising the steps of:
- forming a Group III-V compound semiconductor layer, to which a p-type dopant had been introduced, over a substrate;
- performing a heat treatment by heating the compound semiconductor layer at an up rate between 0.15° C./s and 150° C./s inclusively, and thereafter cooling the heated compound semiconductor layer.
Dependencies are inferred from the claim text.