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US 2003/0207584 A1Published application
Patterning tighter and looser pitch geometries
OwnerSwaminathan Sivakumar, Mark Bohrinventors
Life of this patent
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Abstract
Looser and tighter pitch geometries in semiconductor layouts may be fractured into separate groups and defined separately on at least two separate photomasks. Thereafter, the looser pitch geometries may be exposed using a first mask and the tighter pitch geometries may be exposed using a second mask. The conditions of exposure may be optimized for the different geometries. As a result, the customized exposures for each type of geometry may be optimized without some of the compromises conventionally required.
Claims17
A method comprising:
- exposing a tighter pitch geometry pattern on a semiconductor surface using a first mask;
- and
- exposing a looser pitch geometry pattern on the semiconductor substrate using a second mask.
A method comprising:
- exposing a first pattern on a semiconductor structure;
- and
- exposing a second pattern on the semiconductor structure using different exposure conditions than were used with said first pattern.
A method comprising:
- dividing a layout into tighter and looser pitch geometry elements;
- and
- forming a first mask including said tighter pitch geometry elements and a second mask including said looser pitch geometry elements.
A photolithography mask set comprising:
- a first mask including tighter pitch geometry patterns to be exposed on a semiconductor structure;
- and
- a second mask including looser pitch geometry patterns to be exposed on the same semiconductor structure.
Dependencies are inferred from the claim text.