Manufacturing method of a phase-shift mask, method of forming a resist pattern and manufacturing method of a semiconductor device

A method of making a resist pattern through exposure using phase shift mask, comprising:

• seeking relationship of optical conditions of an exposure optical system used for exposure and a mask structure of said phase shift mask with displacement of a pattern to be transferred by exposure;
• finding said optical conditions and said mask structure that can limit displacement of said pattern within a required range, taking manufacturing errors of the mask into consideration;
• examining the optical conditions and the mask structure, obtained, whether they ensure a required exposure tolerance and a required focal depth;
• and
• when the result of the examination is acceptable, fixing said exposure optical system to the optical conditions selected, then actually manufacturing said phase shift mask having the mask structure selected, and conducting exposure using said exposure optical system and said phase shift mask.

A manufacturing method of a semiconductor device having a step of making a resist pattern through exposure using a phase shift mask;

• seeking relationship of optical conditions of an exposure optical system used for exposure and a mask structure of said phase shift mask with displacement of a pattern to be transferred by exposure;
• finding said optical conditions and said mask structure that can limit displacement of said pattern within a required range, taking manufacturing errors of the mask into consideration;
• examining the optical conditions and the mask structure, obtained, whether they ensure a required exposure tolerance and a required focal depth;
• and
• when the result of the examination is acceptable, fixing said exposure optical system to the optical conditions selected, then actually manufacturing said phase shift mask having the mask structure selected, and conducting exposure using said exposure optical system and said phase shift mask.